REWIRE and its academic leads have been represented in the first issue of Semi Interface, a new publication from Oxford Instruments Plasma Technology. The publication represents a community of technology experts with valuable insight across semiconductor industry challenges, including increasing semiconductor device performance through material interface engineering and optimisation.
REWIRE Director and Royal Academy of Engineering Chair in Emerging Technologies Prof. Martin Kuball, CDTR Research Associate Dr Vanjari Sai Charan and PhD student Aditya K. Bhat, all from the University of Bristol present an Insights piece on the next big power interface challenge, discussing their work on (ultra)-wide bandgap materials as semiconductor materials, with a focus on Ga2O3. They share key insights about the impact of the orientation of trenches in devices, along with promising experimental breakdown voltage results.
Prof. Peter Gammon, co-lead of the REWIRE IKC and Professor of Power Semiconductor Devices at the University of Warwick provides the first part of a review of silicon carbide gate oxide devices He discusses root causes of defective SiC MOSFETs and solutions for this problem, and shares his perspective on how to reduce carbon trapping, increase channel mobility, and lower the device resistance.