Enabling Next-Generation Gallium Oxide High-Voltage Electronics
Delivering step changes for future grid and renewables applicationsBackground and Technology Overview
The move to greater efficiencies in power conversion will be leveraged by cutting-edge material physics. With a bandgap of approximately 4.8 eV has the potential to far outperform SiC and GaN and offer devices that can operate at higher voltages, temperatures, and power densities.
REWIRE is setting new benchmarks for this technology, recent achievements include the demonstration of vertical Schottky diode devices with breakdown voltages exceeding 4 kV—the first of their kind.
REWIRE is focused on unlocking the potential of Ga2O3 for high-voltage applications by addressing critical technical barriers to commercial adoption, paving the way for next-generation power electronics.
Currently at Technology Readiness Level (TRL) 3, the initiative focuses on refining device performance through process enhancements, including dielectric and etching improvements, aiming to boost manufacturability and scalability.
Opportunities
Enhance device packaging and integration tailored for high-voltage operation
Collaborate on scaling manufacturing processes to meet volume production requirements
Co-develop device testing and reliability validation protocols
Explore commercial pathways and joint development opportunities
Benefits
Applications
Unlocked potential of gallium oxide devices
Pushing the capabilities of next-generation technologies
Next-generation device design
Translatable innovations that can be expanded to other material systems
New system-level capabilities
Enabled by kV-rated device components
Springboard for future innovation
Streamlining development for other ultrawide bandgap semiconductors