Chengzhi Zhang, Yidi Yin, Peng Huang, Itsuki Furuhashi, Yoann Robin, Markus Pristovsek, Martin Kuball, Matthew D Smith, N-polar AlN-based enhancement-mode transistor with p-NiOx gate stacks and reduced buffer trapping, J. Phys. D: Appl. Phys., In press, DOI: https://doi.org/10.1088/1361-6463/ae161c.
Mana Hosseinzadehlish, Saeed Jahdi, Xibo Yuan, Martin Kuball, Analysis of Avalanche UIS Ruggedness of Vertical Power Silicon & SiC NPN BJTs, IEEE Open Journal of Power Electronics, In press, DOI: 1109/OJPEL.2025.3621063.
Aditya K. Bhat, Sai Charan Vanjari, Matthew D. Smith, Martin Kuball, Degradation of on-current in 4 kV β-Ga2O3trench Schottky barrier diodes under high voltage step stressing, Phys. Lett., 2025, 127, 11, 113501. DOI: https://doi.org/10.1063/5.0278110.
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne B. Renz, Marina Antoniou, Peter M. Gammon, Vishal A. Shah, Control of 4H-SiC mesa profiles by a lower temperature hydrogen annealing process, Applied Surface Science, 2026, 715, 164295,DOI: https://doi.org/10.1016/j.apsusc.2025.164295.
Khai D. Ngo, Indraneel Sanyal, Matthew D. Smith, Martin Kuball, Heteroepitaxial Growth of α-Ga2O3by MOCVD on a-, m-, r-, and c-Planes of Sapphire, Crystal Growth & Design, 2025, 25, 16, 6529-6538.DOI: 10.1021/acs.cgd.5c00183
Jerome A. Cuenca, Ali Al-Moathin, Menno J. Kappers, Soumen Mandal, Martin Kuball, Rachel A. Oliver, Chong Li, Oliver A. Williams, Microwave plasma modelling for thick diamond deposition on III-nitrides, Carbon, 2025, 241, 120349, DOI: https://doi.org/10.1016/j.carbon.2025.120349.
Zhang, Y. Yin, P. Huang, I. Furuhashi, M. Pristovsek, M. Kuball, M. D. Smith, Normally-Off N-Polar GaN/AlN Transistors with p-NiO Gate Stacks, CS Mantech Conference Proceedings, 2025. DOI: Normally-Off N-Polar GaN/AlN Transistors with p-NiO Gate Stacks.
Yu, S. Jahdi, P. Mellor, O. Alatise and M. Kuball, Determination of Short-Circuit Safe Operating Area of Trench SiC MOSFETs Under Repetitive Stress Conditions, IEEE Transactions on Electron Devices, 2025, 72, 8, 4298-4306, DOI: 10.1109/TED.2025.3575046.
Peng Huang, Matthew D. Smith, Michael J. Uren, Zequan Chen, Benoit Bakeroot, Anurag Vohra, Stefaan Decoutere, Martin Kuball, Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias, IEEE Transactions on Electron Devices, 2025, 72, 7, 3483-3488, DOI: 1109/TED.2025.3571004.
R. Norman, Z. Abdallah, J. W. Pomeroy, G. Drandova, J. Jimenez, A. Xie, A. Lucero, M. Kuball, Impact of AlGaN Back Barrier on the Thermal Resistance of RF HEMTs, IEEE Electron Device Letters, 2025, 46, 7, 1047-1050. DOI: 10.1109/LED.2025.3572287.
Ananthu Vijayan V L, Christopher A. Dawe, Sai Charan Vanjari, Vladimir P. Markevich, Matthew P. Halsall, Anthony R. Peaker, Moorthy Babu Sridharan, Martin Kuball, Characterization of deep-level defects in OFZ grown Nb-doped β-Ga2O3single crystals, APL Mater. 2025, 13, 5, 051121. DOI: https://doi.org/10.1063/5.0261436.
Qinze Cao, Neophytos Lophitis, Arne Benjamin Renz, Kyrylo Melnyk, Marina Antoniou, Peter Michael Gammon, Optimization of the buffer layer in a 15kV SiC N-type gate commutated thyristor for safe, low-loss switching, Power Electronic Devices and Components, 2025, 11, 100099, DOI: https://doi.org/10.1016/j.pedc.2025.100099.
Sai Charan Vanjari, Aditya K. Bhat, Haiqi Huang, Matthew D. Smith, James W. Pomeroy, Martin Kuball, Breakdown-induced directional cracking in kilovolt-class β-Ga2O3(001) vertical trench Schottky barrier diodes, Phys. Lett. 2025; 126, 16, 163502. DOI: https://doi.org/10.1063/5.0260734.
Xiaoyang Ji, Sai Charan Vanjari, Daniel Francis, Jerome A. Cuenca, Arpit Nandi, David Cherns, Oliver A. Williams, Felix Ejeckam, James W. Pomeroy, and Martin Kuball, Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications, ACS Applied Electronic Materials, 2025, 7, 7, 2939-2946. DOI: 1021/acsaelm.5c00119.
Francesca Adams, Saptarsi Ghosh, Zhida Liang, Chen Chen, Noppasorn Suphannarat, Menno J. Kappers, David J. Wallis, Rachel A. Oliver, Behaviour of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures at low temperature, Journal of Physics D: Applied Physics, 58, 135117, DOI: 1088/1361-6463/adafb5.
Ghosh, M. Frentrup, A. M. Hinz, J. W. Pomeroy, D. Field, D. J. Wallis, M. Kuball, R. A. Oliver, Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon, Adv. Mater., 2025, 37, 2413127. DOI: https://doi.org/10.1002/adma.202413127.
Ananthu Vijayan V L, Sai Charan Vanjari, Aditya K. Bhat, Usman Ul Muazzam, James W. Pomeroy, Matthew D. Smith, Sridharan Moorthy Babu, and Martin Kuball, Low On-Resistance and High Carrier Mobility in β-Ga2O3Single-Crystal Substrates through Tantalum Doping, ACS Applied Electronic Materials, 2025, 7, 1, 400-406. DOI: 1021/acsaelm.4c01857.
2024
Anjali, J. W. Pomeroy, J. -T. Chen and M. Kuball, Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs, IEEE Electron Device Letters, 2024, 45, 10, 1721-1723. DOI: 10.1109/LED.2024.3435471.
Farid Medjdoub, Keisuke Shinohara, Fabian Thome, Jeong-sun Moon, Eduardo Chumbes, Matthew T. Guidry, Umesh Mishra, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, James W. Pomeroy, Terirama Thingujam, and Martin Kuball, Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications, in IEEE Microwave Magazine, 2024, 25, 10, 18-37. DOI: 1109/MMM.2024.3428188.
Formicone, J. Walker, J. Pomeroy and M. Kuball, On the use of TCAD for the thermal analysis of RF power transistors and its application to a GaN-on-SiC HEMT with a diamond composite flange, 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 2024, 174-177. DOI: 10.23919/EuMIC61603.2024.10732141.
Parvez, A. S. Kumar, J. W. Pomeroy, M. D. Smith, R. S. Howell and M. Kuball, Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence, IEEE Electron Device Letters, 2024, 45, 12, 2503-2505. DOI: 10.1109/LED.2024.3478073.
Chen, M. Smith, M. Higashiwaki and M. Kuball, Insights Into the Behavior of Leakage Current and Switching Instability in Lateral β-Ga₂O₃ MOSFETs, IEEE Transactions on Electron Devices, 2024,71, 12, 7372-7376. DOI: 10.1109/TED.2024.3485028.
Tian, A. B. Renz, A. Su, N. S. Agbo, P. Taylor, P. A. Mawby and P. M. Gammon, The Impact of Varying the High-Temperature Post-Deposition Anneal Time or Temperature Ramp Rates on ALD-SiO2/4H-SiC Interfaces, 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), Cardiff, United Kingdom, 2024, 1-5, DOI: 10.1109/WiPDAEurope62087.2024.10797374.
Zequan Chen, Michael J. Uren, Peng Huang, Indraneel Sanyal, Matthew D. Smith, Anurag Vohra, Sujit Kumar, Stefaan Decoutere, Benoit Bakeroot and Martin Kuball,. Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates, Applied Physics Letters, 2024, 125. DOI: 1063/5.0222572.
A. Dawe, V. P. Markevich, M. P. Halsall, I. D. Hawkins, A. R. Peaker, A. Nandi, I. Sanyal, M. Kuball, Deep level traps in (010) β-Ga2O3epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates, J. Appl. Phys. 28 July 2024; 136, 4, 045705. DOI: https://doi.org/10.1063/5.0202581.
Malakoutian, K. Woo, D. Rich, R. Mandia, X. Zheng, A. Kasperovich, D. Saraswat, R. Soman, Y. Jo, T. Pfeifer, T. Hwang, H. Aller, J. Kim, J. Lyu, J. K. Mabrey, T. A. Rodriguez, J. Pomeroy, P. E. Hopkins, S. Graham, D. J. Smith, S. Mitra, K. Cho, M. Kuball, S. Chowdhury, Lossless Phonon Transition Through GaN-Diamond and Si-Diamond Interfaces. Adv. Electron. Mater.,2025, 11, 2400146. DOI: https://doi.org/10.1002/aelm.202400146.
Chen Chen, Saptarsi Ghosh, Peter De Wolf, Zhida Liang, Francesca Adams, Menno J. Kappers, David J. Wallis, Rachel A. Oliver, Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy, Phys. Lett.,2024, 124, 23, 232107. DOI: https://doi.org/10.1063/5.0203646.
-S. Kim, A. K. Bhat, M. D. Smith and M. Kuball, Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations, IEEE Transactions on Electron Devices, 2024, 71, 6, 3609-3613. DOI: 10.1109/TED.2024.3393941.
James W. Pomeroy, Alex Leide, Miriam Mowat, Martin Kuball, Mark Davies, Matthew S.L. Jordan, Athanasia Tzelepi, Dave T. Goddard, Dong Liu, Thermal conductivity of SiC and PyC coatings in spherical nuclear fuel particles measured by nanosecond time domain thermoreflectance, Journal of the European Ceramic Society, 2024, 44, 6, 3696-3704. DOI: https://doi.org/10.1016/j.jeurceramsoc.2024.01.024.
Indraneel Sanyal, Arpit Nandi, David Cherns, and Martin Kuball Thermodynamics of Ga2O3Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition, ACS Applied Electronic Materials, 2024, 6, 7, 5021-5028. DOI: 1021/acsaelm.4c00535.
Zeina Abdallah, James W. Pomeroy, Nicolas Blasakis, Athanasios Baltopoulos, and Martin Kuball, Simultaneous Measurement of Thermal Conductivity and Volumetric Heat Capacity of Thermal Interface Materials Using Thermoreflectance, ACS Applied Electronic Materials,2024, 6, 7, 5183-5189. DOI: 1021/acsaelm.4c00691.
Cao, J. Pomeroy, and M. Kuball, Characterizing electric fields in semiconductor devices: effect of second-harmonic light interference, Opt. Lett., 2024, 49, 4034-4037. DOI: https://doi.org/10.1364/OL.525927.
Daniel Francis, Sai Charan Vanjari, Xiaoyang Ji, Tatyana Feygelson, Joseph Spencer, Hannah Masten, Alan Jacobs, James Spencer Lundh, Marko Tadjer, Travis Anderson, Karl Hobart, Bradford Pate, James Pomeroy, Matthew D Smith, Martin Kuball, 3D diamond growth for GaN cooling and TBR reduction, CS Mantech Conference Proceedings, 2024. DOI: 3D diamond growth for GaN cooling and TBR reduction.
Daniel Francis, Xiaoyang Ji, Sai Charan Vanjari, Marko Tadjer, Tatyana Feygelson, James Spencer Lundh, Hannah Masten, Joseph Spencer, Alan G. Jacobs, Travis J. Anderson, Karl D. Hobart, Bradford Pate, Martin Kuball and Felix Ejeckam, Nanocrystalline Diamond Lateral Overgrowth for High Thermal Conductivity Contact to Unseeded Diamond Surface, ECS Trans., 2024, 113, 15. DOI: 1149/11307.0015ecst.
Aditya K. Bhat, Hyun-Seop Kim, Abhishek Mishra, Matthew D. Smith, Michael J. Uren, Martin Kuball, Analysis of interface trap induced ledge in β-Ga2O3based MOS structures using UV-assisted capacitance–voltage measurements, Appl. Phys., 2024, 135, 19, 195704. DOI: https://doi.org/10.1063/5.0203022
Zheng, J. W. Pomeroy, G. Jindal and M. Kuball, Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance, IEEE Transactions on Electron Devices, 2024, 71, 4, 2367-2372, DOI: 10.1109/TED.2024.3367309.
Jahdi, A. S. Kumar, M. Deakin, P. C. Taylor and M. Kuball, β-Ga2O3 in Power Electronics Converters: Opportunities & Challenges, IEEE Open Journal of Power Electronics, 2024, 5, 554-564, DOI: 10.1109/OJPEL.2024.3387076.
Jerome A. Cuenca, Soumen Mandal, Jaspa Stritt, Xiang Zheng, James Pomeroy, Martin Kuball, Adrian Porch, Oliver A. Williams, Dielectric properties of diamond using an X-band microwave split dielectric resonator, Carbon, 2024, 221, 118860, DOI: https://doi.org/10.1016/j.carbon.2024.118860.
Arpit Nandi, Indraneel Sanyal, Alexander Petkov, James W. Pomeroy, David Cherns, Martin Kuball, Heterogenous integration of gallium oxide with diamond and SiC, SPIE 12887, Oxide-based Materials and Devices XV, 2024, 128870C DOI:https://doi.org/10.1117/12.3013691
Filip Gucmann, Milan Ťapajna, Kristína Hušeková, Edmund Dobročka, Alica Rosová, Peter Nádaždy, Peter Eliáš, Fridrich Egyenes, Fedor Hrubišák, Hemendra Chouhan, Javad Keshtkar, Xiang Zheng, James W. Pomeroy, Martin Kuball, Xinglin Xiao, Yali Mao, Biwei Meng, Guoliang Ma, Chao Yuan, Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD, SPIE 12887, Oxide-based Materials and Devices XV, 2024, 1288705 DOI:https://doi.org/10.1117/12.3013087.
Akhil S. Kumar, Stefano Dalcanale, Michael J. Uren, James W. Pomeroy, Matthew D. Smith, Justin Parke, Robert S. Howell and M. Kuball, GaN multichannel devices with latch-induced sub-60 mV/decade subthreshold slope, 2024, Preprint, DOI: 21203/rs.3.rs-4012134/v1.
Ming Jiang, Jon Ell, Harold Barnard, Houzheng Wu, Martin Kuball, Robert O. Ritchie, Dong Liu, On the reduced damage tolerance of fine-grained nuclear graphite at elevated temperatures using in situ 4D tomographic imaging, Carbon, 2024, 222, 118924, DOI: https://doi.org/10.1016/j.carbon.2024.118924.
