Gallium nitride power devices for high voltage applications
Delivering step changes in GaN technology performance and priceBackground and Technology Overview
Gallium nitride (GaN)-based power semiconductor devices are undergoing rapid uptake across a range of new application areas due to the excellent power output, efficiency, voltage range and environmental robustness that the material properties enable.
To date, all commercial GaN devices are based on the high electron mobility transistor (HEMT) device configuration, with the material grown in the III-polar orientation. Complex and expensive strategies are required to maximise device performance and ensure reliability, significantly increasing device cost and mitigating uptake.
Opportunities for innovation with GaN devices exist as new configurations and device architectures are explored.
For example, vertical GaN devices have been shown to handle higher current and voltage levels while reducing on-resistance, but are limited to expensive GaN substrates. Vertical GaN devices on commercially relevant substrates could both significantly reduce manufacturing costs, increasing commercial viability and improving thermal management and reliability
Meanwhile, ‘N-polar’ GaN devices have the potential to mitigate challenges relating to solve a multitude of device issues relating to traditional ‘III-polar’ devices, which could reduce material and device fabrication cost whilst also providing higher breakdown voltage devices, and improved performance and reliability.
These emerging technologies are paving the way for next-generation power electronics with even greater performance, efficiency, scalability, and applicability.
Barriers still exist for the development and uptake of these devices, which are relevant to various stakeholders across the supply chain.
Materials suppliers
Vertical GaN devices currently require GaN substrates which are expensive and limited in size – alternatives are emerging.
Device designers
Designing novel device architectures and configurations is extremely complex and inaccuracies can hamper performance and reliability.
Device fabrication
Low defect tolerance of GaN leads to yield issues and requires new or modified fabrication techniques compared to those currently available.
Opportunities
Low cost device fabrication and manufacture
Delivering novel GaN devices with increased performance and reliability
Co-development of new applications for GaN power devices
Benefits
Applications
Materials innovation
Explore alternative substrates capable of providing high quality material to maintain yield and performance whilst simultaneously reducing device cost.
Novel process development
Develop high-yield, reproducible and reliable processes for new device configurations and architectures.
Design ecosystem
Create new TCAD tools and models tailored to emergent GaN devices.
Realising higher voltage applications
Higher breakdown voltages at lower on-resistances to realise compact, efficient topologies to open new avenues for exploitation.
Automotive
Industrial
Data centres
Consumer
Partners sought
TRL Status & Available IP
GaN materials and epitaxy specialists
Device designers
High voltage packaging experts
Front- and back-end fabrication providers
Systems integrators
GaN power device end users
Current TRL: Low – experimental/early-stage
Available IP: Potential for IP from developments across material growth, device design and fabrication