Commercial silicon carbide power demonstrators
Lowering the cost of developing innovative SiC power devicesBackground and Technology Overview
Entering the SiC supply chain presents significant challenges for companies, particularly due to high startup costs, R&D investment, time and resource constraints, expert knowledge, and skilled labour requirements. REWIRE’s flagship SiC programme is designed to lower the cost of developing novel power devices and reduce the barrier to entry for R&D.
A core REWIRE initiative is focusing on the creation of IP-free SiC demonstrator devices, fabricated entirely within REWIRE’s facilities, advancing the current state of commercial technology.
The device offerings will be IP-free. Fundamental device architectures such as SiC MOSFETS will replicate the characteristics of automotive-grade commercial products, while higher voltage devices (e.g. superjunction MOSFETs, IGBTs and thyristors) will unlock SiC potential for future use in the grid.
Developing full device prototypes for industry is often cost-prohibitive, requiring expertise beyond an innovator’s core capabilities, which REWIRE aims to aid. Barriers are especially pronounced for different industry stakeholders.
Equipment manufacturers
Barriers to integrate new fabrication processes within complex workflows without compromising output, device efficiency, reliability, or yield.
Device designers
Barriers relating to robust data on process sensitivity for design variation and refinement, and to ensure practical fabrication compatibility.
Device fabs
Barriers due to a disconnect between high-throughput production settings and the need for flexible, small-batch innovation.
Opportunities
Novel end-use applications
Development of high-voltage prototype SiC power devices
Testing of fabrication processes
Benefits
Applications
Lowering the barrier to R&D
Developing full device prototypes within industry is often resource- and cost-prohibitive and requiring expertise outside core capabilities. This process leverages REWIRE academic expertise and dramatically reduces cost for innovators for developing device prototypes.
Fostering open innovation
This open innovation platform enables companies to modify designs, test new processes, and introduce novel concepts – all while maintaining robust benchmarking against standardised and reliable reference structures.
Design, process and fabrication flexibility
The process will allow bespoke modifications for specific requirements, and includes precise characterisation of process and design variations vital for enabling innovation in device development.
Automotive
Industrial
Space
Energy
Partners sought
TRL Status & Available IP
Equipment manufacturers
Fabrication providers
Device designers
SiC power device end users
The 1200 V MOSFET design is currently in the design phase, with fabrication trials conducted by newly hired REWIRE fabrication staff.
The first-generation demonstrator devices are expected in Q4 2025.