Vanjari S C, Bhat A K, Huang H, Smith M D, Pomeroy J W, Kuball M. (2025) Breakdown-induced directional cracking in kilovolt-class β-Ga2O3 (001) vertical trench Schottky barrier diodes; DOI: 10.1063/5.0260734
Ji X, Vanjari S C, Francis D, Cuenca J A, Nandi A, Cherns D, Williams O A, Ejeckam F, Pomeroy J W, Kuball M. (2025) Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications; DOI: 10.1021/acsaelm.5c00119
Cao Q, Lophitis N, Renz A B, Melnyk K, Antoniou M, Gammon P M. (2025) Optimization of the Buffer Layer in a 15kV SiC N-type Gate Commutated Thyristor for Safe, Low-loss Switching; DOI: 10.1016/j.pedc.2025.100099
Vijayan A V L, Dawe C A, Vanjari S C, Markevich V P, Halsall M P, Peaker A R, Sridharan m B, Kuball M.(2025) Characterization of deep-level defects in OFZ grown Nb-doped β-Ga2O3 single crystals; DOI: 10.1063/5.0261436
Cuenca J A, Al-Moathin A, Kappers M J , Mandal S, Kuball M, Oliver R A, Li C, and Williams O A, ”Microwave plasma modelling for thick diamond deposition on III-nitrides”, Carbon 241, 120349 (2025); DOI: 10.1016/j.carbon.2025.120349
Adams F, Ghosh S, Liang Z, Chen C, Suphannarat N, Kappers M J, Wallis D J, and Oliver R A, “Behaviour of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures at low temperature”, J. Phys. D: Appl. Phys. 58, 135117 (2025); DOI: 10.1088/1361-6463/adafb5
Ghosh S, Frentrup M, Hinz A M, Pomeroy J W, Field D, Wallis D J, Kuball M, and Oliver R A, “Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon”, Advanced Materials 37, 2413127 (2025); DOI: 10.1002/adma.202413127
2024
Chen Z, Smith M, Higashiwaki M, Kuball M. (2024). Insights Into the Behavior of Leakage Current and Switching Instability in Lateral β-Ga₂O₃ MOSFETs; DOI: 10.1109/TED.2024.3485028
Jahdi S, Kumar A, Deakin M, Taylor P, Kuball M. (2024). β-Ga2O3 in Power Electronics Converters: Opportunities & Challenges; DOI: 10.1109/OJPEL.2024.3387076
Tian X, Renz A B, Su A, Agbo N S, Taylor P, Mawby P A, Gammon P M. (2024). The Impact of Varying the High-Temperature Post-Deposition Anneal Time or Temperature Ramp Rates on ALD-SiO2/4H-SiC Interfaces; DOI: 10.1109/WiPDAEurope62087.2024.10797374
Chen C, Ghosh S, De Wolf P, Liang Z, Adams F, Kappers M J, Wallis D J, and Oliver R A, “Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy”, Appl. Phys. Lett. 124, 232107 (2024); DOI: 10.1063/5.0203646
